Huawei, Harbin Institute of Technology jointly issued diamond chip patent, cultivate diamonds rose 16%
Release time:
2023-12-14
On November 21, according to the enterprise investigation, recently, Huawei Technology Co., Ltd. and Harbin Institute of Technology applied"A hybrid bonding method for three-dimensional integrated chips based on silicon and diamond"Patent Publication.
The patent summary shows that the present invention relates.chip manufacturing technologyField.
The method includes: preparing silicon-based Cu/SiO2 mixed bonding samples and diamond-based Cu/SiO2 mixed bonding samples for plasma activation treatment;
A hydrofluoric acid solution is dropped on the surface of the silicon-based and/or diamond-based Cu/SiO2 hybrid bonding sample to be bonded after blow-drying, and the silicon-based and diamond-based Cu/SiO2 hybrid bonding samples are aligned and bonded for pre-bonding to obtain a pre-bonding chip; the pre-bonding chip is hot-press bonded and annealed to obtain a hybrid bonding sample pair.
The invention realizes the three-dimensional heterogeneous integration of silicon/diamond based on Cu/SiO2 hybrid bonding. It is reported that the patent was applied for publication on October 27, 2023.Affected by this, the concept of cultivating diamonds has increased by more than 16%.
A hybrid bonding method for three-dimensional integrated chips based on silicon and diamond
1 |
Preparation of silicon-based Cu/SiO hybrid bonding samples and diamond-based Cu/SiO hybrid bonding samples; |
2 |
plasma activation treatment of the silicon-based Cu/SiO hybrid bonding sample and the diamond-based Cu/SiO hybrid bonding sample respectively; |
3 |
The silicon-based Cu/SiO mixed bonding sample and the diamond-based Cu/SiO mixed bonding sample after plasma activation treatment are soaked in an organic acid solution, the organic acid wet activation is carried out, and the cleaning is dried; |
4 |
dropping hydrofluoric acid solution on the surface to be bonded of the silicon-based Cu/SiO mixed bonding sample and/or the diamond-based Cu/SiO mixed bonding sample after blow-drying, and pre-bonding the silicon-based Cu/SiO mixed bonding sample and the diamond-based Cu/SiO mixed bonding sample in alignment and fitting to obtain a pre-bonding chip; |
5 |
The pre-bonding chip is subjected to thermal pressure bonding and annealing treatment to obtain a hybrid bonding sample pair. |
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